| PART |
Description |
Maker |
| TIM1414-2-252 |
HIGH POWER P1dB=33.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
| TM053-059-12-33 |
5.3 - 5.9 GHz 33 dBm Power Module
|
Transcom, Inc.
|
| TM059-070-11-33 |
5.9 - 7.0 GHz 33 dBm Power Module
|
Transcom, Inc.
|
| PB-CMM3566-LC-0000 CMM3566-LC07 CMM3566-LC CMM3566 |
3.4 to 3.5 GHz, 7.0V, 24 dBm W-CDMA Power Amplifier
|
Mimix Broadband
|
| CFK2062-P3-000T CFK2062-P3 |
1.8 to 2.0 GHz 30 dBm Power GaAs FET
|
Mimix Broadband
|
| CFK2162-P5-000T |
2.3 to 2.5 GHz 34 dBm Power GaAs FET
|
Mimix Broadband
|
| CFK2162-P3-000T CFK2162-P3 |
1.8 to 2.0 GHz 34 dBm Power GaAs FET
|
http://
List of Unclassifed Manufacturers
ETC[ETC]
|
| PE-W19B002 |
WR-19 Instrumentation Grade Waveguide H-Bend with UG383-U-Mod Flange Operating from 40 GHz to 60 GHz
|
Pasternack Enterprises,...
|
| PE71S2016 |
SMA SPST PIN Diode Switch Operating From 2 GHz to 26.5 GHz Up To 30 dBm
|
Pasternack Enterprises,...
|
| Q62702-G0041 BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| CFK2062-P3 CFK2062-P3-000T |
1.8 to 2.0 GHz 30 dBm Power GaAs FET 1800 MHz - 2000 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
SIEMENS AG
Mimix Broadband, Inc.
|
| TA080-180-15-15 |
8 - 18 GHz 15 dBm Amplifier
|
Transcom, Inc.
|
